Data for reference gaskill-jem-24-1525

The Effect of Organometallic Vapor Phase Epitaxial Growth Conditions on Wurtzite GaN Electron Transport Properties

DK Gaskill, AE Wickenden, K Doverspike, B Tadayon, LB Rowland

Journal of Electronic Materials 24(11), 1525 (1995).

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This item is cited by the following items in the database:

  1. Study of GaN films grown by metalorganic chemical vapour deposition
  2. Paramagnetic defects in GaN

Contributed by Wim Van der Stricht from intec.rug.ac.be. on Friday, May 31, 1996 4:14:52 AM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 1:34:07 PM

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