Data for reference hersee-jem-24-1519

The Role of the Low Temperature Buffer Layer and Layer Thickness in the Optimization of OMVPE Growth of GaN on Sapphire

SD Hersee, J Ramer, K Zheng, C Kranenberg, K Malloy, M Banas, M Goorsky

Journal of Electronic Materials 24(11), 1519 (1995).

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This item is cited by the following items in the database:

  1. Crystalline Structure changes in GaN Films Grown at Different Temperatures
  2. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  3. Properties of GaN epilayers grown on misoriented sapphire substrates

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