Data for reference keller-jem-24-1707

Metalorganic Chemical Vapor Deposition Growth of High OPtical Quality and High Mobility GaN.

BP Keller, S Keller, D Kapolnek, WN Jiang, YF Wu, H Masui, X Wu, B Heying, JS Speck, UK Mishra, SP Denbaars

Journal of Electronic Materials 24(11), 1707 (1992).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Study of GaN films grown by metalorganic chemical vapour deposition
  2. Alternative N precursors and Mg doped GaN grown by MOVPE
  3. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

Contributed by Wim Van der Stricht from intec.rug.ac.be. on Friday, May 31, 1996 4:24:55 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 11:03:24 AM.
© 1998 The Materials Research Society