Data for reference matsuoka-jem-21-157

Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE

T. Matsuoka, N. Yoshimoto, T. Sasaki, A. Katsui

Journal of Electronic Materials 21(2), 157 (1992).

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This item is cited by the following items in the database:

  1. ScAlMgO4: an Oxide Substrate for GaN Epitaxy
  2. Growth and characterization of AlInGaN quaternary alloys
  3. Growth of Ga-face and N-face GaN films using ZnO Substrates
  4. MOVPE growth optimization of high quality InGaN films.
  5. Phase Separation in wurtzite In1-x-yGaxAlyN
  6. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Contributed by Eric S. Hellman from gw1.att.com. on Monday, November 20, 1995 4:06:56 PM

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