References in Journal of the Electrochemical Society
1960
Some properties of aluminum nitride
1961
On the preparation of the nitrides of aluminum and gallium
1962
Luminescence in the System Al2O3-AlN
Preparation, stability, and chemiluminescence of gallium nitride
1963
Microhardness of single crystals of BeO and other wurtzite compounds
1971
Gallium nitride films
The use of metalorganics in the preparation of semiconductor materials. IV. The nitrides of aluminum and gallium
1972
Heteroepitaxial thermal gradient solution growth of GaN
Electrolytic etching of GaN
The equilibrium pressure of N
2
over GaN
Mass spectrometric studies of vapor-phase crystal growth
1973
Vapor phase epitaxial growth of GaN on GaAs, GaP, Si, and sapphire substrates from GaBr
3
and NH
3
1974
Crystal growth and characterization of gallium nitride
Microstructural observations on gallium nitride light emitting diodes
Few characteristics of epitaxial GaN--etching and thermal decomposition
1975
Growth of GaN thin-films from triethylgallium monamine
The preparation and properties of aluminum nitride films
1976
Light emitting patterns of gallium nitride electroluminescence
Optical properties of GaN light-emitting diodes
Etching of GaN using phosphoric acid
1978
Growth kinetics and catalytic effects in the vapor phase epitaxy of gallium nitride
X-ray diffraction topography and crystal characterization of GaN epitaxial layers for light emitting diodes
1983
Silicon on cubic zirconia
1986
Epitaxial growth and properties of Al
x
Ga
1-x
N by MOVPE
Review of rapid thermal annealing of ion implanted GaAs
1988
Thermal diffusion in Metal-Organic Chemical Vapor Deposition
1994
Widegap Column III Nitride Semiconductors for UV/Blue Light Emitting Devices
1996
Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates
Selective dry etching of III-nitrides in Cl
2
/Ar,CH
4
/H
2
/Ar, ICl/Ar and IBr/Ar
1997
A Mass Spectroscopic Study of the Vapor Phase Thermal Decomposition of Trimethylamine
Photoassisted Anodic Etching of Gallium Nitride
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