lu-jecs-144-l8

Data for reference lu-jecs-144-l8

Photoassisted Anodic Etching of Gallium Nitride

H Lu, Z Wu, I Bhat

Journal of the Electrochemical Society 144(1), L8 (1997).

UV-light-assisted anodic etching of unintentionally n-typed doped GaN is described. The electrolyte used was a mixture of buffered aqueous solution and ethylene glycol. Etch rates between 2 and 160 nm/min could be achieved. It is postulated that UV light generates electron-hole pairs to aid oxide formation. The detailed mechanism is not clear yet.

Contributed by Wilfried G.J.H.M. van Sark from 131.174.8.4 on Wednesday, May 7, 1997 6:06:10 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.