Data for reference vartuli-jecs-143-l246

Selective dry etching of III-nitrides in Cl2/Ar,CH4/H2/Ar, ICl/Ar and IBr/Ar

C. B. Vartuli, S. J. Pearton, J. D. MacKenzie, C. R. Abernathy, R. J. Shul

Journal of the Electrochemical Society 143, L246 (1996).

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This item is cited by the following items in the database:

  1. New plasma chemistries for etching GaN and InN: BI3 and BBr3

Contributed by A submitted manuscript, on March 3, 1998 5:07:23 PM

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