Data for reference liu-jecs-125-1161

Growth kinetics and catalytic effects in the vapor phase epitaxy of gallium nitride

S. S. Liu, D. A. Stevenson

Journal of the Electrochemical Society 125, 1161 (1978).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  3. The role of gaseous species in group-III nitride growth
  4. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  5. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  6. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  7. Current status of GaN crystal growth by sublimation sandwich technique

Contributed by S. Strite

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