Data for reference morimoto-jecs-120-1783

Vapor phase epitaxial growth of GaN on GaAs, GaP, Si, and sapphire substrates from GaBr3 and NH3

Y. Morimoto, K. Uchiho, S. Ushio

Journal of the Electrochemical Society 120, 1783 (1973).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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