Data for reference manasevit-jecs-118-1864

The use of metalorganics in the preparation of semiconductor materials. IV. The nitrides of aluminum and gallium

H. M. Manasevit, F. M. Erdmann, W. I. Simpson

Journal of the Electrochemical Society 118, 1864 (1971).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. ScAlMgO4: an Oxide Substrate for GaN Epitaxy
  3. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
  4. Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
  5. Properties of GaN epilayers grown on misoriented sapphire substrates
  6. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
  7. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by S. Strite

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