Data for reference chu-jecs-118-1200

Gallium nitride films

T. L. Chu

Journal of the Electrochemical Society 118, 1200 (1971).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by S. Strite


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