Data for reference munir-jcp-42-4223

Activation energy for the sublimation of gallium nitride

Z. A. Munir, A. W. Searcy

Journal of Chemical Physics 42, 4223 (1965).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  3. The role of gaseous species in group-III nitride growth
  4. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  5. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  6. Thermodynamic properties of group-III nitrides and related species
  7. Current status of GaN crystal growth by sublimation sandwich technique
  8. Novel approach to simulation of group-III nitrides growth by MOVPE
  9. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia

Contributed by S. Strite

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