1971

• Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

1972

• Vapor epitaxy of gallium nitride

1974

• A new type of twin in an AlN crystal
• Kinetics of the epitaxial growth of GaN using Ga, HCl and NH₃
• Growth and morphology of GaN
• The growth, crystallographic and electrical assessment of epitaxial layers of aluminum nitride on corundum substrates
• Control of lattice parameters and dislocations in the system Ga_1-xAl_xAs_1-yP_y/GaAs
• Calculation of ternary and quaternary III-V phase diagrams

1975

• High pressure solution growth of GaN

1976

• Defects in epitaxial multilayers. III. Preparation of almost perfect multilayers
• Growth of high purity AlN crystals

1977

• Growth anisotropy in the GaN/Al₂O₃ system
• Effect of the growth parameters on the properties of GaN:Zn epilayers
• AlN Single Crystals

1981

• Study on the growth rate in VPE of GaN
• Various chemical mechanisms for the crystal growth of III-V semiconductors using coordination compounds as starting material in the MOCVD process

1982

• Lateral Growth of Single-Crystal InP Over Dielectric Films by Orientation-Dependent VPE,
• High pressure vapor growth of GaN

1983

• SOI by CVD: epitaxial lateral overgrowth (ELO) process - review
• Study on the influence of annealing effects in GaN VPE

1984

• Equilibrium pressure of N₂ over GaN and high pressure solution growth of GaN
• High Pressure Thermodynamics of GaN
• Crystal growth of GaN by the reaction between gallium and ammonia
• Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH₃)₃ and NH₃

1986

• Equilibrium gas phase species for MOCVD of Alx Ga1-x As
• Low temperature growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
• Thermodynamic analysis of molecular beam epitaxy of III-V semiconductors

1988

• Elementary process of the thermal decomposition of the alkyl gallium
• Zn related electroluminescence properties in MOVPE grown GaN

1989

• Factors affecting the growth of aluminum nitride layers on sapphire by the reaction of nitrogen with aluminum monoselenide
• X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (0 0 1) substrates
• Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga _1-xAl _xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE

1990

• Theory of exciton linewidth in II-VI semiconductor mixed crystals
• Preparation of Al _xGa _1-xN/GaN heterostructures by MOVPE
• Thermodynamic calculations of congruent vaporization in III-V systems: applications to the In-As, Ga-As and Ga-In-As systems
• Thermodynamic analysis of molecular beam epitaxy of III-V compounds: Application to the Ga_yIn_1-yAs multilayer epitaxy
• Cathodoluminescence of MOVPE-grown GaN layer on α-Al₂O₃
• Growth of single crystal GaN substrate using hydride vapor phase epitaxy
• Epitaxial growth of indium nitride

1991

• MOVPE growth of GaN on a misoriented sapphire substrate
• Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures
• Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth
• The Radial Flow Planetary Reactor: Low Pressure versus Atmospheric Pressure MOVPE
• Step-density dependence of growth-rate on vicinal surface of MOCVD
• Growth mechanism of GaN grown on sapphire with AlN buffer layer by MOVPE
• Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

1992

• Full color TV projector based on A²B⁶ electron-beam pumped semiconductor lasers
• Epitaxial Growth of GaAs and GaN by Gas Source Molecular Beam Epitaxy using Organic Group V Compounds
• MOVPE Growth of GaAs Using a N₂ Carrier

1993

• X-Ray Examination of GaN Single Crystals Grown at High Hydrostatic Pressure
• Molecular Beam Epitaxy of Nitride Thin Films
• Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytype
• Growth of GaN and AlGaN for uv/ blue p-n junction diodes
• The growth of thick GaN film on sapphire substrate by using ZnO buffer layer.
• The Growth of Single Crystalline GaN on a Si Substrate Using AlN as an Intermediate Layer
• Instability of III-V compound surfaces due to liquid phase formation
• Morphological Properties of Chemical Vapor Deposited AlN Films

1994

• The measurement of threading dislocation densities in semiconductors crystals by X-ray diffraction
• Epitaxial Growth of Cubic and Hexagonal GaN by Gas Source Molecular Beam Epitaxy Using a Microwave Plasma Nitrogen Source
• Deposition and Characterization of Diamond, Silicon Carbide and Gallium Nitride Thin Films
• Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth in InN on Si and alpha-Al2O3 substrates
• Comparison of GaN- and ZnSe-based materials for light emitters
• Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on alpha-SiC and sapphire
• Heteroepitaxy of Gallium Nitride on (0001), (1012BAR) and (1010BAR) Sapphire Surfaces
• Selective growth of wurtzite GaN and Al_xN on GaNand Al_xGa_1-xN on GaN/sapphire substrates bymetalorganic vapor phase epitaxy
• Surface Orientation Dependence of Growth Rate of Cubic GaN
• Metalorganic vapor phase epitaxy growth of (In_xGa_{1 - x}N/GaN)ⁿ layered structures and reduction of indium droplets
• Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N₂
• Development of Advanced Mathematical Models for Numerical Calculations of Radiative Heat Transfer in Metalorganic Chemical Vapor Deposition Reactors

1995

• Influence of growth rates on properties of InN thin films
• GaN growth by MOCVD
• Surface reconstructions and growth mode transitions of AlAs(100)
• GaN Based Iii-v Nitrides by Molecular Beam Epitaxy
• The Growth and Properties of Group Iii Nitrides
• Effects of V/Iii Supply Ratio on Improvement of Crystal Quality of Zincblende GaN Grown by Gas Source Molecular Beam Epitaxy Using RF Radical Nitrogen Source
• GaN Growth by a Controllable RF Excited Nitrogen Source
• Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy
• Molecular Beam Epitaxy of Gallium Nitride by Electron Cyclotron Resonance Plasma and Hydrogen Azide
• In Situ Monitoring of Reflection High Energy Electron Diffraction Oscillation During the Growth of Gallium Nitride Films by Gas Source Molecular Beam Epitaxy
• Growth of GaN Films by Combined Laser and Microwave Plasma Enhanced Chemical Vapor Deposition
• Observation of nanopipes in alpha-GaN crystals
• Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
• Metalorganic Molecular Beam Epitaxy of Cubic GaN on (100)GaAs Substrates Using Triethylgallium and Monomethylhydrazine
• Some aspects of GaN growth on GaAs (100) substrates using MBE with an RF activated nitrogen plasma source
• Nitrogen precursors in metalorganic vapour phase epitaxy of (Al, Ga)N

1996

• Three-dimensional model of any shape face disappearance in crystal habit
• Acceptor bound biexcitons in ZnSe and CdS.
• Conditions of the excess liquid phase formation during the molecular beam epitaxy of III-V ternary compounds
• Crystal Growth of column-III nitride semiconductors and their electrical and optical properties
• Microstrucutral evolution and defect formation during the initial stages of the growth of SiC and AlN on 6H-SiC (0001) substrates
• Growth of group III nitrides by chemical beam epitaxy
• III-N light emitting diodes fabricated using RF nitrogen gas source MBE
• Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals
• The investigation of GaN growth on silicon and sapphire using in-situ-time-of-flight low energy ion scattering and RHEED
• Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
• Growth Study of CBE of GaN_xP using NH3 and TBP
• The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED
• Three-dimensional model the disappearance of triangular faces in crystal habit
• Thermal etching of binary and ternary III-V compounds under vacuum conditions
• Growth and characterization of GaN layers on SiC substrates
• Influence of moisture and oxygen on the formation of cubic phase GaN in halide vapor phase epitaxial growth
• Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD
• The microstructure of GaN monocrystals grown at high pressure
• Vapor Phase Epitaxy of GaN using GaCl₃/N₂ and NH₃/N₂

1997

• First III-V Nitride Violet Laser Diodes
• Novel single source precursors for MOCVD of AlN, GaN and InN
• Thermodynamic analysis of the MOVPE growth of In _xGa_1-xN
• Thermodynamic Analysis of MOVPE growth of InGaN
• MOVPE of GaN using a specially designed two flow horizontal reactor
• High quality GaN grown by MOVPE
• Low Pressure MOVPE of GaN and GaInN/GaN heterostructures
• New Dopant Precursors for n-type and p-type GaN
• Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
• Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
• Selective Area Epitaxy of GaN for electron field emission devices
• Study of GaN and InGaN films grown by MOCVD
• Growth of bulk InGaN films and QWs by atmospheric MOCVD
• Photoluminescence excitation spectroscopy of GaPN alloys: conduction band edge formation by N incorporation
• GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution x-ray diffraction
• Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors
• The influence of strain and mosaic structure on the electrical and optical properties of GaN films on sapphire substrates
• Photoluminescence characteristics of nitrogen atomic layer doped GaAs grown by MOVPE
• Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001)
• Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers.
• Formation and photoluminescence spectrum of w-GaN powder
• Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy
• Plasma-excited OMVPE of GaN on (0001) sapphire
• Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0001)
• Optical and structural properties of GaN films grown on c-plane sapphire by ECR-MBE
• Stability of nitrogen in binary III-V systems
• The energetics of the GaN MBE reaction: a case study of meta-stable growth
• Growth and characterization of cubic GaN
• Supersonic jet epitaxy of III-nitride semiconductors
• Growth of GaN by HVPE
• Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies
• GaN growth on sapphire
• Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N₂ pressure
• Group IVB refractory metal crystals as lattice-matched substrates for growth of the group III nitrides by plasma-source MBE
• Observation of coreless dislocations in alpha-GaN
• GaN epitaxial growth on sapphire (0001): the role of the substrate nitridation
• Growth and characterization of In-based nitride compounds
• Feasibility of the synthesis of AlAsN and GaAsN films by plasma-source MBE
• Epitaxial growth of III-V nitride semiconductors by MOCVD
• Growth of group III nitrides by MOMBE
• Theory of AlN, GaN, InN and their alloys
• Gas source MBE of III-V nitrides
• Sublimation growth and characterization of bulk aluminum nitride single crystal
• Influence of magnesium doping on the structural properties of GaN layers
• Layer by layer growth of GaN and AlN by molecular beam epitaxy
• Chemical polishing of bulk and epitaxial GaN
• High rate GaN epitaxial growth by sublimation sandwich method

1998

• The effect of III/V ratio and substrate temperature on the morphology and properties of GaN and AlN-layers grown by molecular beam epitaxy on Si(111)
• Morphology and characterization of GaN single crystals grown in a Na flux
• Influence of in situ surface preparation and carrier gas on the growth mode of GaN in MOVPE
• Analysis of gallium nitride growth by gas-source molecular beam epitaxy
• On the nature of the 3. 41 eV luminescence in hexagonal GaN
• Unstable mixing region in wurtzite In_1‐x‐yGa_xAl_yN
• High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
• Valenceband splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures
• MOVPE of GaInN heterostructures and quantum wells
• Lateral overgrowth of GaN on patterned GaN/Sapphire substrate via selective metalorganic vapour phase epitaxy: a route to self supported GaN substrates
• The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures,
• Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
• Preparation and properties of free-standing HVPE grown GaN substrates
• Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells
• The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN:Mg grown by MOVPE
• Influence of buffer layers on the In-content of GaInN layers
• Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
• 1-eV solar cells with GaInNAs active layer

1999

• Chemical beam epitaxy of GaInNas/GaAs quantum wells and its optical property
• Strain effect on the N composition dependence of GaNAs bandgap energy grown on (001) GaAs by metalorganic molecular beam epitaxy
• InGaN-based blue light-emitting diodes and laser diodes,
• In situ monitoring of the decomposition of GaN thin films.

2000

• Mechanism analysis of improved GaInNAs optical properties through thermal annealing
• Determination of Tilt in the Lateral Epitaxial Overgrowth of GaN Using X-Ray Diffraction,
• On mechanisms of sublimation growth of AlN bulk crystals
• Transport Effects in the Sublimation Growth of Aluminum Nitride

2001

• Pendeo-Epitaxial Growth of Thin Films of Gallium Nitride and Related Materials and Their Characterization,
• On low temperature kinetic effects in metal –organic vapor phase epitaxy of III –V compounds

last updated Thursday, February 14, 2002 1:49:48 PM.
© 2001 The Materials Research Society