Data for reference kamler-jcg-246-21

Defect-selective etching of GaN in a modified molten bases system

G. Kamler, J. Weyher, I. Grzegory, I. Jezierska, E. Wosinski

Journal of Crystal Growth 246, 21 (2002).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Low dislocation density, high power InGaN laser diodes

Contributed by A submitted manuscript, on Tuesday, December 16, 2003 2:50:35 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 11:01:34 AM.
© 1998 The Materials Research Society