Data for reference shi-jcg-233-177

Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique

Y. Shi, Z. Y. Xie, L. H. Liu, B. Liu, J. H. Edgar, M. Kuball

Journal of Crystal Growth 233, 177 (2001).

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This item is cited by the following items in the database:

  1. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere

Contributed by A submitted manuscript, on Monday, February 9, 2004 6:40:27 PM

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