Data for reference lahreche-jcg-205-245

Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy(LP-MOVPE) from 3D islands and lateral overgrowth

H. Lahreche, P. Vennegues, B. Beaumont, P. Gibart

Journal of Crystal Growth 205, 245 (1999).

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This item is cited by the following items in the database:

  1. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
  2. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Tuesday, March 26, 2002 6:10:23 PM

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