Data for reference marchand-jcg-195-328

Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition

H Marchand, JP Ibbetson, PT Fini, S Keller, SP DenBaars, JS Speck, UK Mishra

Journal of Crystal Growth 195, 328 (1998).

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This item is cited by the following items in the database:

  1. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by H. Marchand from montreal.ucsb.edu. on Thursday, February 11, 1999 3:02:22 PM

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