Data for reference beaumont-jcg-189/190-97

Lateral overgrowth of GaN on patterned GaN/Sapphire substrate via selective metalorganic vapour phase epitaxy: a route to self supported GaN substrates

B. Beaumont, P. Gibart, M. Vaille, S. Haffouz, G. Nataf, A. Bouillé

Journal of Crystal Growth 189/190, 97 (1998).

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This item is cited by the following items in the database:

  1. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  2. Localized Epitaxy of GaN by HVPE on patterned Substrates

Contributed by A submitted manuscript, on Wednesday, July 22, 1998 1:14:16 PM

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