Data for reference sasaoka-jcg-189/190-61

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

C Sasaoka, H Sumakawa, A Kimura, M Nido, A Usui, A Sakai

Journal of Crystal Growth 189/190, 61 (1998).

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This item is cited by the following items in the database:

  1. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by H. Marchand from mocvd-pc.ece.ucsb.edu. on Saturday, January 30, 1999 7:27:22 PM

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