Data for reference vennegues-jcg-187-167

Influence of in situ surface preparation and carrier gas on the growth mode of GaN in MOVPE

P. Vennegues, B. Beaumont, S. Haffouz, M. Vaille, P. Gibart

Journal of Crystal Growth 187, 167 (1998).

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This item is cited by the following items in the database:

  1. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  2. Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  3. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Wednesday, July 22, 1998 1:14:31 PM

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