Data for reference sanchezgarcia-jcg-183-23

The effect of III/V ratio and substrate temperature on the morphology and properties of GaN and AlN-layers grown by molecular beam epitaxy on Si(111)

M.A. Sanchez-Garcia, E. Calleja, E. Monroy, F.J. Sanchez, F. Calle, E. Muņoz, R. Beresford

Journal of Crystal Growth 183, 23 (1998).

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This item is cited by the following items in the database:

  1. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

Contributed by A submitted manuscript, on Tuesday, July 14, 1998 2:59:02 PM
Modified by M.A. Sanchez-Garcia from pc-sanchez.die.upm.es.30.100.138.in-addr.arpa. on Friday, September 18, 1998 7:49:58 AM

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