Data for reference molnar-jcg-178-147

Growth of GaN by HVPE

R.J. Molnar, W. Götz, L.T. Romano, N.M. Johnson

Journal of Crystal Growth 178(1/2), 147 (1997).

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This item is cited by the following items in the database:

  1. Localized Epitaxy of GaN by HVPE on patterned Substrates
  2. Review of polarity determination and control of GaN

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, July 8, 1997 9:31:22 AM

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