Data for reference okumura-jcg-178-113

Growth and characterization of cubic GaN

H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, S. Yoshida

Journal of Crystal Growth 178(1/2), 113 (1997).

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This item is cited by the following items in the database:

  1. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  2. P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, July 8, 1997 9:26:10 AM

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