Data for reference tokuda-jcg-173-237

Plasma-excited OMVPE of GaN on (0001) sapphire

T. Tokuda, A. Wakahara, S. Noda, A. Sasaki

Journal of Crystal Growth 173, 237 (1997).

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This item cites the following items in the database:

  1. Electronic structure and phase stability of GaAs1-xNx alloys
  2. Giant and composition-dependent optical bowing coefficient in GaAsN alloys
  3. Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, June 24, 1997 10:01:57 AM

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