Data for reference keller-jcg-170-349Growth of bulk InGaN films and QWs by atmospheric MOCVD
S. Keller, B. Keller, D. Kapolnek, U. Mishra, S. DenBaars, I. Shmagin, R. Kolbas, S. Krishnankutty
Journal of Crystal Growth 170(1-4), 349 (1997).
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This item is cited by the following items in the database:
- GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
- Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, February 3, 1997 10:44:51 AM
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