Data for reference ambacher-jcg-170-335

Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium

O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann

Journal of Crystal Growth 170(1-4), 335 (1997).

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Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, February 3, 1997 10:33:05 AM

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