Data for reference tanaka-jcg-170-329

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

S. Tanaka, S. Iwai, Y. Aoyagi

Journal of Crystal Growth 170(1-4), 329 (1997).

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This item is cited by the following items in the database:

  1. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  2. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, February 3, 1997 10:30:30 AM

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