Data for reference scholz-jcg-170-321

Low Pressure MOVPE of GaN and GaInN/GaN heterostructures

F. Scholz, V. Härle, F. Steuber, H. Bolay, A. Dörnen, B. Kaufmann, V. Syganow, A. Hangleiter

Journal of Crystal Growth 170(1-4), 321 (1997).

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This item is cited by the following items in the database:

  1. GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  2. Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, February 3, 1997 10:25:26 AM

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