Data for reference beaumont-jcg-170-316

High quality GaN grown by MOVPE

B. Beaumont, M. Vaille, T. Boufaden, B. el Jani, P. Gibart

Journal of Crystal Growth 170(1-4), 316 (1997).

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This item is cited by the following items in the database:

  1. Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  2. Yellow luminescence in Mg-doped GaN
  3. XPS study of Au/GaN and Pt/GaN contacts
  4. p-doping of GaN by MOVPE
  5. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, February 3, 1997 10:22:48 AM

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