Data for reference koukitu-jcg-170-306

Thermodynamic Analysis of MOVPE growth of InGaN

A. Koukitu, N. Takahashi, T. Taki, H. Seki

Journal of Crystal Growth 170(1-4), 306 (1997).

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This item is cited by the following items in the database:

  1. VPE of InxGa1-xN using InCl3, GaCl3 and NH3 sources
  2. Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN
  3. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, February 3, 1997 10:17:36 AM

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