Data for reference nakamura-jcg-170-11

First III-V Nitride Violet Laser Diodes

S. Nakamura

Journal of Crystal Growth 170(1-4), 11 (1997).

InGaN MQW LDs grown on A-face sapphire. The facets were cleaved to expose the r-face. Pulsed operation at 415 nm is described.

This item is cited by the following items in the database:

  1. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, February 3, 1997 10:12:19 AM

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