Data for reference hashimoto-jcg-169-185

Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

T Hashimoto, O Imafuji, M Ishida, A Yoshikawa, K Itoh, Y Terakoshi, T Sugino, J Shirafuji

Journal of Crystal Growth 169(1), 185 (1996).

Low Pressure MOCVD growth of GaN on cubic SiC and microstructural characterization of the predominately cubic GaN films.

This item cites the following items in the database:

  1. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Properties of cubic GaN grown on GaAs
  2. Structure control of GaN films grown on (001) GaAs substrates by GaAs surface pretreatments
  3. Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
  4. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride
  5. Growth of high-resistivity wurtzite and zincblende structure single crystal GaN by reactive-ion molecular beam epitaxy
  6. Progress and Prospects for GaN and the III-V Nitride Semiconductors

Contributed by S. Strite from internet-gw.zurich.ibm.ch. on Tuesday, December 24, 1996 8:21:48 AM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, December 29, 1996 8:06:23 AM

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