Data for reference dmitriev-jcg-166-601

Growth and characterization of GaN layers on SiC substrates

V. Dmitriev, K. Irvine, G. Bulman, J. Edmond, A. Zubrilov, V. Nikolaev, I. Nikitina, D. Tsvetkov, A. Babanin, A. Sitnikova, Yu. Musikhin, N. Bert

Journal of Crystal Growth 166, 601 (1996).

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This item is cited by the following items in the database:

  1. Strain relaxation in GaN layers grown on porous GaN sublayers

Contributed by A submitted manuscript, on Wednesday, October 27, 1999 3:21:05 PM

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