Data for reference taferner-jcg-164-185The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED
WT Taferner, A Bensaoula, E Kim, A Bousetta
Journal of Crystal Growth 164(1-4), 185 (1996).
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Contributed by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Sunday, September 29, 1996 11:18:44 AM
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