Data for reference kondow-jcg-164-175

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

M Kondow, K Uomi, T Kitatani, S Watahiki, Y Yazawa

Journal of Crystal Growth 164(1-4), 175 (1996).

A GaP/GaAsN/GaP Quantum Well.

This item is cited by the following items in the database:

  1. Optical Properties of GaNAs Grown by MBE
  2. Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

Contributed by S. Strite from internet-gw.zurich.ibm.ch. on Thursday, August 8, 1996 12:43:18 PM
Modified by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Sunday, September 29, 1996 11:07:37 AM

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