Data for reference taferner-jcg-164-167

The investigation of GaN growth on silicon and sapphire using in-situ-time-of-flight low energy ion scattering and RHEED

W. T. Taferner, A. Bensaoula, E. Kim, A. Bousetta

Journal of Crystal Growth 164, 167 (1996).

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This item is cited by the following items in the database:

  1. Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE

Contributed by A submitted manuscript, on Friday, September 22, 2000 3:17:59 PM

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