Data for reference wong-jcg-164-159

Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals

W. S. Wong, N. Y. Li, H. K. Dong, F. Deng, S. S. Lau, C. W. Tu, J. Hays, S. Bidnyk, J. J. Song

Journal of Crystal Growth 164, 159 (1996).

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This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review
  2. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  3. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by A submitted manuscript, on Monday, July 14, 1997 11:44:42 PM

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