davis-jcg-163-93

Data for reference davis-jcg-163-93

Microstrucutral evolution and defect formation during the initial stages of the growth of SiC and AlN on 6H-SiC (0001) substrates

Robert F. Davis, Satoru Tanaka, R. Scott Kern

Journal of Crystal Growth 163, 93 (1996).

An exhaustive TEM study of the initial stages of GSMBE growth on SiC and AlN epitaxy on both vicinal and on-axis SiC substrates. The growth of AlN/SiC is strongly influenced by the symmetry mismatch of the 6H-SiC and 2H-AlN bilayer steps.

This item is cited by the following items in the database:

Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates

Contributed by Toby Strite from internet-gw.zurich.ibm.ch. on Tuesday, June 18, 1996 11:20:52 AM

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