Data for reference akasaki-jcg-163-86

Crystal Growth of column-III nitride semiconductors and their electrical and optical properties

I. Akasaki, H. Amano

Journal of Crystal Growth 163, 86 (1996).

A review of the AlN buffer layer mechanism on sapphire substrates, and the electrical properties of Mg- and Si-doped GaN.

This item is cited by the following items in the database:

  1. PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN

Contributed by Toby Strite from internet-gw.zurich.ibm.ch. on Tuesday, June 18, 1996 10:59:43 AM

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