Data for reference hooper-jcg-155-157

Some aspects of GaN growth on GaAs (100) substrates using MBE with an RF activated nitrogen plasma source

S. E. Hooper, C. T. Foxon, T. S. Cheng, L. C. Jenkins, D. E. Lacklison, J. W. Orton, T. Bestwick, A. Kean, M. Dawson, G. Duggan

Journal of Crystal Growth 155, 157 (1995).

GaN/GaAs(100) growth by PEMBE

This item is cited by the following items in the database:

  1. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  2. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

Contributed by S. Strite from internet-gw.zurich.ibm.ch. on Monday, October 14, 1996 5:38:47 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 1:32:37 PM.
© 1998 The Materials Research Society