Data for reference moriyasu-jcg-150-916

In Situ Monitoring of Reflection High Energy Electron Diffraction Oscillation During the Growth of Gallium Nitride Films by Gas Source Molecular Beam Epitaxy

Y Moriyasu, H Goto, N Kuze, et al.

Journal of Crystal Growth 150(1-4), 916 (1995).

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This item is cited by the following items in the database:

  1. In Situ Control of GaN Growth by Molecular Beam Epitaxy
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by E. Hellman

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