Data for reference ohtani-jcg-150-902

Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy

A. Ohtani, K. S. Stevens, M. Kinniburgh, R. Beresford

Journal of Crystal Growth 150, 902 (1995).

The operating conditions of the ASTeX CECR plasma source are modelled and experimentally verified with an eye towards reducing ion damage in the epitaxial GaN film.

This item is cited by the following items in the database:

  1. Properties of InGaN deposited on Glass at Low Temperature

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, April 1, 1997 10:54:29 AM

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