Data for reference morkoc-jcg-150-887

GaN Based Iii-v Nitrides by Molecular Beam Epitaxy

H Morkoc, A Botchkarev, A Salvador, et al.

Journal of Crystal Growth 150(1-4), 887 (1995).

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This item is cited by the following items in the database:

  1. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy

Contributed by E. Hellman

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