Data for reference sato-jcg-146-262

Influence of growth rates on properties of InN thin films

Y. Sato, S. Sato

Journal of Crystal Growth 146, 262 (1995).

InN grown by PEMBE varied in electrical properties as a function of the growth rate. At very low growth rates the carrier concentration could be reduced almost 2 orders of magnitude, however the resistivity of the same material is nearly 4 orders of magnitude higher.

This item cites the following items in the database:

  1. Optical band gap of indium nitride

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, February 11, 1997 11:27:08 AM

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