Data for reference sato-jcg-145-99

Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N2

Michio Sato

Journal of Crystal Growth 145, 99 (1994).

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This item is cited by the following items in the database:

  1. Surface Morphology and Structure of GaNxAs1-x
  2. Optical Properties of GaNAs Grown by MBE

Contributed by A submitted manuscript, on Wednesday, June 25, 1997 11:39:13 AM

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