Data for reference shimizu-jcg-145-209

Metalorganic vapor phase epitaxy growth of (InxGa1 - xN/GaN)n layered structures and reduction of indium droplets

Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki

Journal of Crystal Growth 145, 209 (1994).

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This item is cited by the following items in the database:

  1. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Contributed by A submitted manuscript, on Tuesday, March 9, 1999 6:46:26 PM

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