Data for reference kato-jcg-144-133Selective growth of wurtzite GaN and AlxN on GaNand AlxGa1-xN on GaN/sapphire substrates bymetalorganic vapor phase epitaxy
Y. Kato, S. Kitamura, K. Hiramatsu, N. Sawaki
Journal of Crystal Growth 144, 133 (1994).
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This item is cited by the following items in the database:
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- Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
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