Data for reference yamamoto-jcg-137-415

Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth in InN on Si and alpha-Al2O3 substrates

Akio Yamamoto, Mitsunori Tsjino, Mitsugu Ohkubo, Akihiro Hashimoto

Journal of Crystal Growth 137(3-4), 415 (1994).

The metalorganic chemical vapor deposition (MOCVD) growth of InN has been studied using Si(111) and alpha-Al2O3 (0001) substrates. An InN film grown on a Si substrate is poorly oriented, while a single-crystalline InN film is obtained on an alpha-Al2O3 substrate in spite of the larger lattice mismatch. Nitridation of alpha-Al2O3 surface occurs at a temperature higher than 800 C, and brings about a remarkable improvement of heteroepitaxial InN quality.

This item is cited by the following items in the database:

  1. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
  2. Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  3. Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1994JCrGr.137..415Y

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