Data for reference davis-jcg-137-161

Deposition and Characterization of Diamond, Silicon Carbide and Gallium Nitride Thin Films

RF Davis

Journal of Crystal Growth 137(1-2), 161 (1994).

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This item is cited by the following items in the database:

  1. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by E. Hellman

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