okumura-jcg-136-361

Data for reference okumura-jcg-136-361

Epitaxial Growth of Cubic and Hexagonal GaN by Gas Source Molecular Beam Epitaxy Using a Microwave Plasma Nitrogen Source

H Okumura, S Misawa, T Okahisa, S Yoshida

Journal of Crystal Growth 136, 361 (1994).

Cubic and hexagonal GaN epilayers were grown on GaAs substrates by gas source MBE using a microwave plasma N source. These GaN epilayers showed quite strong cathodeluminescence emission. X-ray and electron diffraction measurements indicated the improved crystalline quality, compared with GaN epilayers grown by using dimethylhydrazine. By the same method, GaN epilayers were also grown on 3C-SiC substrates, which have a lattice constant much closer to GaN.

This item is cited by the following items in the database:

Epitaxial growth of cubic GaN and AlN on Si(001)

Contributed by Hajime Okumura from wall.etl.go.jp. on Friday, May 17, 1996 7:49:07 AM

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